Preparation, thermal stability and electrical transport properties of vaesite, NiS2
- Published
- Accepted
- Subject Areas
- Ceramics, Electronic, Optical and Magnetic, Energy Materials, Semiconductors
- Keywords
- Vaesite, Chalcogenide, Hot-press, Density Functional Theory, Semiconductor, Thermoelectric
- Copyright
- © 2019 Ferreira et al.
- Licence
- This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, reproduction and adaptation in any medium and for any purpose provided that it is properly attributed. For attribution, the original author(s), title, publication source (PeerJ Preprints) and either DOI or URL of the article must be cited.
- Cite this article
- 2019. Preparation, thermal stability and electrical transport properties of vaesite, NiS2. PeerJ Preprints 7:e27825v1 https://doi.org/10.7287/peerj.preprints.27825v1
Abstract
Vaesite, a nickel chalcogenide with NiS2 formula, has been synthetized and studied by theoretical and experimental methods. NiS2 was prepared by solid-state reaction under vacuum and densified by hot-pressing, at different consolidation conditions. Dense single-phase pellets (relative densities >94%) were obtained, without significant lattice distortions for different hot-pressing conditions. The thermal stability of NiS2 was studied by thermogravimetric analysis. Both as-synthetized and hot-pressed NiS2 have a single phase nature, although some hot-pressed samples had traces of the sulfur deficient phase, Ni1-xS (<1%vol), due to the strong desulfurization at T > 340ºC. The electronic band structure and density of states were calculated by Density Functional Theory (DFT), indicating a metallic behavior. However, the electronic transport measurements showed p-type semiconductivity for bulk NiS2, verifying its characteristic behavior has a Mott insulator. The consolidation conditions strongly influence the electronic properties, with the best room-temperature Seebeck coefficient, electrical resistivity and power factor being 182µVK-1, 2257μΩm and 14.1µWK-2m-1, respectively, pointing this compound as a good starting point for a new family of thermoelectric materials.
Author Comment
This is a submission to PeerJ Materials Science for review.